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| Transistors 2SC5592 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter For various driver circuits I Features * Low collector to emitter saturation voltage VCE(sat) , large current capacitance * High-speed switching * Mini type 3-pin package, allowing downsizing and thinning of the equipment. * Complementary pair with 2SA2010 1 0.40+0.10 -0.05 3 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 2 (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10 1.1+0.2 -0.1 (0.65) I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 15 15 5 10 2.5 600 150 -55 to +150 Unit V V V A A mW C C Marking Symbol: 2T Note) *: Measure on the ceramic substrate at 15 x 15 x 0.6 mm3. I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Collector to emitter saturation voltage *1 Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 VCE(sat) Cob fT ton tstg tf Conditions VCB = 10 V, IE = 0 IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 2.5 A IC = 1 A, IB = 10 mA IC = 2.5 A, IB = 50 mA Collector output capacitance Transition frequency Turn-on time *2 Storage time *2 Fall time *2 VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = -50 mA f = 200 MHz 15 15 5 400 280 110 220 30 180 30 100 10 320 mV mV pF MHz ns ns ns 1 000 Min Typ Max 0.1 Unit A V V V Note) *1: Rank classification ( 1 ms) *2: Refere to the measurement circuit. 0 to 0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini Type Package (3-pin) 1.1+0.3 -0.1 0.40.2 5 1 2SC5592 I Measurement Circuit IB2 IB1 RB Transistors Output RL 470 F VCC = 5 V Input PW = 20 s DC 1% -201B1 = 201B2 = IC = 1.5 A 2 |
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